1517-110M

TRANS RF BIPO 350W 9A 55AW1
1517-110M P1
1517-110M P1
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Microsemi Corporation ~ 1517-110M

Part Number
1517-110M
Manufacturer
Microsemi Corporation
Description
TRANS RF BIPO 350W 9A 55AW1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- 1517-110M PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
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Product Parameter

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Part Number 1517-110M
Part Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 70V
Frequency - Transition 1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f) -
Gain 7.3dB ~ 8.6dB
Power - Max 350W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V
Current - Collector (Ic) (Max) 9A
Operating Temperature -
Mounting Type Chassis Mount
Package / Case 55AW-1
Supplier Device Package 55AW-1

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