IXFA7N100P

MOSFET N-CH 1000V 7A D2PAK
IXFA7N100P P1
IXFA7N100P P1
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IXYS ~ IXFA7N100P

Part Number
IXFA7N100P
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 7A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFA7N100P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFA7N100P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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