Images are for reference only.
See Product Specifications for product details.
| Part Number | IRF5806TRPBF |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 594pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Rds On (Max) @ Id, Vgs | 86 mOhm @ 4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IRF510 | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-220AB | - | 0 | Details |
 |
IRF510L | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-262 | - | 0 | Details |
 |
IRF510PBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-220AB | - | 8110 | Details |
 |
IRF510S | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | 0 | Details |
 |
IRF510SPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | 4528 | Details |
 |
IRF510STRL | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | 0 | Details |
 |
IRF510STRLPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | 0 | Details |
 |
IRF510STRR | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | 0 | Details |
 |
IRF510STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | - | 0 | Details |
 |
IRF520 | STMicroelectronics | MOSFET N-CH 100V 10A TO-220 | 0 | Details | |
 |
IRF520N | Infineon Technologies | MOSFET N-CH 100V 9.7A TO-220AB | 0 | Details | |
 |
IRF520NL | Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | 0 | Details |