Images are for reference only.
See Product Specifications for product details.
| Part Number | IPD60R600E6ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
IPD60R145CFD7ATMA1 | Infineon Technologies | HIGH POWERNEW | - | 39617 | Details |
 |
IPD60R170CFD7ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | - | 42887 | Details |
 |
IPD60R180C7ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | 0 | Details | |
|
IPD60R180P7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 18A TO252-3 | - | 0 | Details |
|
IPD60R180P7SAUMA1 | Infineon Technologies | CONSUMER | - | 0 | Details |
|
IPD60R180P7SE8228AUMA1 | Infineon Technologies | CONSUMER | - | 87098 | Details |
 |
IPD60R1K0CEATMA1 | Infineon Technologies | MOSFET N-CH 600V TO-252-3 | 0 | Details | |
|
IPD60R1K0CEAUMA1 | Infineon Technologies | CONSUMER | 0 | Details | |
 |
IPD60R1K4C6 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | 0 | Details | |
 |
IPD60R1K4C6ATMA1 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | 0 | Details | |
 |
IPD60R1K5CEATMA1 | Infineon Technologies | MOSFET N-CH 600V TO-252-3 | 0 | Details | |
 |
IPD60R1K5CEAUMA1 | Infineon Technologies | MOSFET N-CH 650V 5A TO252 | 0 | Details |