FDMS3660S

MOSFET 2N-CH 30V 13A/30A 8-PQFN
FDMS3660S P1
FDMS3660S P1
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Fairchild/ON Semiconductor ~ FDMS3660S

Part Number
FDMS3660S
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET 2N-CH 30V 13A/30A 8-PQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDMS3660S PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number FDMS3660S
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 30A
Rds On (Max) @ Id, Vgs 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
Power - Max 1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package Power56

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