DMN30H4D0LFDE-7

MOSFET N-CH 300V .55A 6UDFN
DMN30H4D0LFDE-7 P1
DMN30H4D0LFDE-7 P1
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Diodes Incorporated ~ DMN30H4D0LFDE-7

Part Number
DMN30H4D0LFDE-7
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 300V .55A 6UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMN30H4D0LFDE-7 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 6000 pcs
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Product Parameter

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Part Number DMN30H4D0LFDE-7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 550mA (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.7V, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 187.3pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 630mW (Ta)
Rds On (Max) @ Id, Vgs 4 Ohm @ 300mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-UDFN Exposed Pad

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