DMN2019UTS-13

MOSFET 2N-CH 20V 5.4A TSSOP-8
DMN2019UTS-13 P1
DMN2019UTS-13 P1
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Diodes Incorporated ~ DMN2019UTS-13

Part Number
DMN2019UTS-13
Manufacturer
Diodes Incorporated
Description
MOSFET 2N-CH 20V 5.4A TSSOP-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMN2019UTS-13 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number DMN2019UTS-13
Part Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.4A
Rds On (Max) @ Id, Vgs 18.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V
Power - Max 780mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP

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