DMN2016LHAB-7

MOSFET 2N-CH 20V 7.5A 6UDFN
DMN2016LHAB-7 P1
DMN2016LHAB-7 P1
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Diodes Incorporated ~ DMN2016LHAB-7

Part Number
DMN2016LHAB-7
Manufacturer
Diodes Incorporated
Description
MOSFET 2N-CH 20V 7.5A 6UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMN2016LHAB-7 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 171000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number DMN2016LHAB-7
Part Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 7.5A
Rds On (Max) @ Id, Vgs 15.5 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Power - Max 1.2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Supplier Device Package U-DFN2030-6

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