Images are for reference only.
See Product Specifications for product details.
| Part Number | IDC04S60CEX1SA1 |
|---|---|
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 4A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 50µA @ 600V |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
IDC04S60CEX1SA1 | Infineon Technologies | DIODE SIC 600V 4A SAWN WAFER | 0 | Details | |
|
IDC04S60CEX7SA1 | Infineon Technologies | DIODE GEN PURPOSE SAWN WAFER | 0 | Details |