NSV60101DMR6T1G

60V 1A DUAL NPN LOW VCE
NSV60101DMR6T1G P1
NSV60101DMR6T1G P1
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ON Semiconductor ~ NSV60101DMR6T1G

Part Number
NSV60101DMR6T1G
Manufacturer
ON Semiconductor
Description
60V 1A DUAL NPN LOW VCE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NSV60101DMR6T1G PDF online browsing
Family
Transistors - Bipolar (BJT) - Arrays
  • In Stock : 475181 pcs
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Product Parameter

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Part Number NSV60101DMR6T1G
Part Status Active
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 5V
Power - Max 530mW
Frequency - Transition 200MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SC-74

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