Images are for reference only.
See Product Specifications for product details.
| Part Number | JANTXV2N3810L |
|---|---|
| Part Status | Active |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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JANTX1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO5 | - | 0 | Details |
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JANTX1N1184R | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | - | 0 | Details |
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JANTX1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO5 | - | 0 | Details |
|
JANTX1N1186R | Microsemi Corporation | SILICON RECTIFIER | - | 1226 | Details |
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JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | - | 0 | Details |
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JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 87 | Details |
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JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 100 | Details |
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JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 39 | Details |
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JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
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JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 36 | Details |
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JANTX1N1204AR | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 4 | Details |
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JANTX1N1206A | Microsemi Corporation | DIODE GEN PURP 600V 12A DO203AA | - | 0 | Details |