Images are for reference only.
See Product Specifications for product details.
| Part Number | SPD03N60C3 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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SPD01N60C3BTMA1 | Infineon Technologies | MOSFET N-CH 650V 0.8A TO-252 | - | 0 | Details |
 |
SPD02N50C3 | Infineon Technologies | MOSFET N-CH 560V 1.8A DPAK | 0 | Details | |
 |
SPD02N50C3BTMA1 | Infineon Technologies | LOW POWER_LEGACY | 0 | Details | |
 |
SPD02N60C3BTMA1 | Infineon Technologies | MOSFET N-CH 650V 1.8A DPAK | - | 0 | Details |
 |
SPD02N60S5BTMA1 | Infineon Technologies | MOSFET N-CH 600V 1.8A TO-252 | - | 0 | Details |
 |
SPD02N80C3ATMA1 | Infineon Technologies | MOSFET N-CH 800V 2A 3TO252 | 0 | Details | |
 |
SPD02N80C3BTMA1 | Infineon Technologies | MOSFET N-CH 800V 2A TO-252 | - | 0 | Details |
 |
SPD03N50C3 | Infineon Technologies | MOSFET N-CH 560V 3.2A DPAK | 0 | Details | |
 |
SPD03N50C3ATMA1 | Infineon Technologies | MOSFET N-CH 500V 3.2A DPAK | 0 | Details | |
 |
SPD03N50C3BTMA1 | Infineon Technologies | MOSFET N-CH 560V 3.2A DPAK | - | 17317 | Details |
 |
SPD03N60C3 | Infineon Technologies | MOSFET N-CH 650V 3.2A DPAK | 5000 | Details | |
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SPD03N60C3ATMA1 | Infineon Technologies | MOSFET N-CH 600V 3.2A DPAK | 0 | Details |