IRF6619

MOSFET N-CH 20V 30A DIRECTFET
IRF6619 P1
IRF6619 P2
IRF6619 P3
IRF6619 P1
IRF6619 P2
IRF6619 P3
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Infineon Technologies ~ IRF6619

Part Number
IRF6619
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 20V 30A DIRECTFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRF6619.pdf IRF6619 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 9600 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number IRF6619
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 5040pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs 2.2 mOhm @ 30A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX

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