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See Product Specifications for product details.
| Part Number | IRF5210STRLPBF |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 38A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IRF520 | STMicroelectronics | MOSFET N-CH 100V 10A TO-220 | 0 | Details | |
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IRF520N | Infineon Technologies | MOSFET N-CH 100V 9.7A TO-220AB | 0 | Details | |
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IRF520NL | Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | 0 | Details | |
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IRF520NLPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A TO-262 | 0 | Details | |
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IRF520NPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A TO-220AB | 1902 | Details | |
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IRF520NS | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | 0 | Details | |
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IRF520NSPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | 0 | Details | |
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IRF520NSTRL | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | 0 | Details | |
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IRF520NSTRLPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | 800 | Details | |
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IRF520NSTRR | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | 0 | Details | |
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IRF520NSTRRPBF | Infineon Technologies | MOSFET N-CH 100V 9.7A D2PAK | 0 | Details | |
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IRF520PBF | Vishay Siliconix | MOSFET N-CH 100V 9.2A TO-220AB | - | 0 | Details |