IPD025N06NATMA1

MOSFET N-CH 60V 26A TO252-3
IPD025N06NATMA1 P1
IPD025N06NATMA1 P1
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Infineon Technologies ~ IPD025N06NATMA1

Part Number
IPD025N06NATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 26A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPD025N06NATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 5000 pcs
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Product Parameter

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Part Number IPD025N06NATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 2.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs 2.5 mOhm @ 90A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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