DF200R12W1H3B27BOMA1

IGBT MODULE VCES 1200V 200A
DF200R12W1H3B27BOMA1 P1
DF200R12W1H3B27BOMA1 P1
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Infineon Technologies ~ DF200R12W1H3B27BOMA1

Part Number
DF200R12W1H3B27BOMA1
Manufacturer
Infineon Technologies
Description
IGBT MODULE VCES 1200V 200A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DF200R12W1H3B27BOMA1 PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 1274 pcs
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Product Parameter

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Part Number DF200R12W1H3B27BOMA1
Part Status Active
IGBT Type -
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 30A
Power - Max 375W
Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 2nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

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