DF200R12PT4B6BOSA1

IGBT MODULE VCES 1200V 200A
DF200R12PT4B6BOSA1 P1
DF200R12PT4B6BOSA1 P1
Images are for reference only.
See Product Specifications for product details.

Infineon Technologies ~ DF200R12PT4B6BOSA1

Part Number
DF200R12PT4B6BOSA1
Manufacturer
Infineon Technologies
Description
IGBT MODULE VCES 1200V 200A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DF200R12PT4B6BOSA1 PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 356 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number DF200R12PT4B6BOSA1
Part Status Active
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 300A
Power - Max 1100W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 200A
Current - Collector Cutoff (Max) 15µA
Input Capacitance (Cies) @ Vce 12.5nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Related Products

All Products