DF200R12KE3HOSA1

IGBT MODULE VCES 1200V 200A
DF200R12KE3HOSA1 P1
DF200R12KE3HOSA1 P1
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Infineon Technologies ~ DF200R12KE3HOSA1

Part Number
DF200R12KE3HOSA1
Manufacturer
Infineon Technologies
Description
IGBT MODULE VCES 1200V 200A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DF200R12KE3HOSA1 PDF online browsing
Family
Transistors - IGBTs - Modules
  • In Stock : 699 pcs
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Product Parameter

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Part Number DF200R12KE3HOSA1
Part Status Active
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) -
Power - Max 1040W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 14nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

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