EPC2023ENG

TRANS GAN 30V 60A BUMPED DIE
EPC2023ENG P1
EPC2023ENG P2
EPC2023ENG P3
EPC2023ENG P1
EPC2023ENG P2
EPC2023ENG P3
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EPC ~ EPC2023ENG

Part Number
EPC2023ENG
Manufacturer
EPC
Description
TRANS GAN 30V 60A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- EPC2023ENG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2110 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number EPC2023ENG
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 15V
Vgs (Max) +6V, -4V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 1.3 mOhm @ 40A, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

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