EPC2015

TRANS GAN 40V 33A BUMPED DIE
EPC2015 P1
EPC2015 P1
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See Product Specifications for product details.

EPC ~ EPC2015

Part Number
EPC2015
Manufacturer
EPC
Description
TRANS GAN 40V 33A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EPC2015.pdf EPC2015 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2500 pcs
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Product Parameter

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Part Number EPC2015
Part Status Last Time Buy
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V
Vgs (Max) +6V, -5V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 4 mOhm @ 33A, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die Outline (11-Solder Bar)
Package / Case Die

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