2N7000-G

MOSFET N-CH 60V 0.2A TO92-3
2N7000-G P1
2N7000-G P1
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See Product Specifications for product details.

Microchip Technology ~ 2N7000-G

Part Number
2N7000-G
Manufacturer
Microchip Technology
Description
MOSFET N-CH 60V 0.2A TO92-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- 2N7000-G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 709 pcs
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Product Parameter

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Part Number 2N7000-G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 200mA (Tj)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Rds On (Max) @ Id, Vgs 5 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)

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