AOWF11S65

MOSFET N-CH 650V 11A TO262F
AOWF11S65 P1
AOWF11S65 P1
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Alpha & Omega Semiconductor Inc. ~ AOWF11S65

Part Number
AOWF11S65
Manufacturer
Alpha & Omega Semiconductor Inc.
Description
MOSFET N-CH 650V 11A TO262F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
AOWF11S65.pdf AOWF11S65 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number AOWF11S65
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 646pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Rds On (Max) @ Id, Vgs 399 mOhm @ 5.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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